Didier GOGUENHEIM

[1] Theoretical and experimental aspects of the thermal dependence of electron capture coefficients.
D.GOGUENHEIM, M.LANNOO,
J.Appl.Phys., 68 (3), p.1059, 1990 

[2] Accurate measurements of capture cross sections of semiconductor insulator interface states by a trap filling experiment: the charge potential feed-back effect.
GOGUENHEIM, D. VUILLAUME, G. VINCENT, N.M. JOHNSON,
Appl. Phys. 68(3), p. 1104, 1990. 

[3] Theoretical study of carrier capture assisted by phonons: application to the EL2, E3, A and B defects in GaAs.
D.GOGUENHEIM, M.LANNOO
Proc. of the International Conference on the Physics of Semiconductors ICPS 20, Thessaloniki GRECE, August 6-10, 1990
Vol.1, p.453, edited by E.M.ANASTASSAKIS and J.D.JOANNOPOULOS
World Scientific Publishing Co.Pte.Ltd. (Singapore, 1990) 

[4.] New insights on the electronic properties of the trivalent silicon defects at oxidized <100> silicon surfaces.
VUILLAUME, D. GOGUENHEIM, G. VINCENT,
Appl. Phys. Lett., 57-(12), p. 1206, 1990. 

[5] Nature of the Defects generated by electric field stress at the Si-SiO2 interface.
VUILLAUME, D. GOGUENHEIM, J.C. BOURGOIN,
Appl. Phys. Lett. 58-(5), p. 490, 1991. 

[6] Theoretical calculation of the capture cross section of the dangling bond at the Si-SiO2 interface.
D.GOGUENHEIM, M.LANNOO
Phys.Rev. B44 (4), p.1724, 1991 

[7] Defects induced by high electric field stress and the trivalent silicon defects at the Si/SiO2 interface.
VUILLAUME, A. MIR, D. GOGUENHEIM,
In " Defects in semiconductors ", " Ed. G.Davies, G.G.Delmeo and M.Stavola, Trans. Tech. Publications),
Materials Science Forum, Vols. 83-87, p. 1427, 1991. 

[8] Re-examination of the configuration coordinate diagram of EL2.
D.GOGUENHEIM, D.STIEVENARD, G.GUILLOT
Proc. of the International Conference on Defects in Semiconductors ICDS 16, Bethlehem USA, July 1991,
Materials Science Forum Vol.83-87, p.917-922, 1992
edited by G.DAVIES, G.G.DELEO, M.STAVOLA, Trans Tech Publications Ltd., 1992 

[9] Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal-insulator-semiconductor devices.
FONTAINE, D. GOGUENHEIM, D. DERESMES, D. VUILLAUME, M. GARRET, F. RONDELEZ,
Appl. Phys. Lett. 62(18), p. 2256, 1993. 

[10] Bravaix A., Vuillaume D., Goguenheim D., Dorval D., Haond M.
Improved Hot-Carrier immunity of P-MOSFET's with 8nm-thick nitrided gate-oxide during bidirectional stressing.
Microelectronic Engineering,
vol. 28, p.273-276, 1995

[11] Vuillaume D., Bravaix A., Goguenheim D., Marchetaux J.C., Boudou A.
Comment on "Hot-Hole induced negative oxide charges in N-MOSFET's".
IEEE Trans. on Electron Devices,
vol. 43 (9), p 1473, 1996 

[12] Goguenheim D., Bravaix A., Vuillaume D., Mondon F., Candelier Ph., Jourdain M., Meinertzhagen A.
A coupled I(V) and Charge-Pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides.
Microelectronic Engineering,
vol. 36, p. 141-144, 1997 

[13] Bravaix A., Goguenheim D., Vuillaume D., Revil N., Varrot M., Mortini P.
Influences of the different degradation mechanisms in AC stressed P-MOSFET's during Pass-transistor operation.
Microelectronic Engineering,
vol. 36, p.305-308, 1997

[14] Goguenheim D., Bravaix A., Vuillaume D, Varrot M., Revil N., Mortini P.
Hot carrier reliability in n-MOSFET's used as pass-transistor.
Microelectronics Reliability,
vol. 38, no.4, p. 539-544,1998 

[15] Vuillaume D., Bravaix A., Goguenheim D.
Hot Carrier injections in _SiO2.
Microelectronics Reliability,
vol. 38, no.1, p. 7-22, 1998 

[16] Bravaix A., Goguenheim D., Revil N., Vincent E., Varrot M., Mortini P.
Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35µm n-MOSFET's.
Microelectronics Reliability,
vol.39, n°1, p. 35-44, 1999 

[17] Goguenheim D., Bravaix A., Vuillaume D., Mondon F., Candelier Ph., Jourdain M. and Meinertzhagen A.
Experimental study of the Quasi-Breakdown failure mechanism in 4.5 nm-thick _SiO2 oxides.
Microelectronics Reliability,
vol. 39, p. 165-169, 1999 

[18] Meinertzhagen A., Petit C., Jourdain M., Mondon F., and Goguenheim D.
On positive charge annihilation and stress-induced leakage current decrease.
Microelectronics Reliability,
vol. 39, p.191-196, 1999 

[19] Goguenheim D., Bravaix A., Vuillaume D., Mondon F., Jourdain M. and Meinertzhagen A.
Stress Induced Leakage Currents in N-MOSFET's submitted to Channel Hot Carrier Injections.
Journal of Non-Crystalline Solids,
vol. 245, p. 41-47, 1999

[20.] Bravaix A., Goguenheim D., Vincent E., Revil N.
Turn-around effects during dynamic operations in 0.25µm Cmos technology from low to high temperature.
Microelectronic Engineering,
vol. 48, p. 163-166, 1999

[21] Goguenheim D., Bravaix A., Moragues J.M., Lambert P., Boivin P.
Comparison of oxide leakage currents induced by ion implantation and high field electric stress.
Microelectronics and Reliability,
vol. 40, p. 751-754, 2000 

[22] Pic N., Glachant A., Nitsche S., Hoarau J.Y., Goguenheim D., Vuillaume D., Sibai A., Chaneliere C.
Determination of the electrical properties of thermally grown ultrathin nitride films.
Microelectronics and Reliability,
vol. 40, p. 589-593, 2000 

[23] Goguenheim D, Bravaix A, Monserie C., J.M.Moragues, P.Lambert, P.Boivin
Comparison of oxide leakage currents induced by ion implantation and high field electric stress.
Solid State Electronics,
Vol. 45 (8) p.1355-1360, 2001

[24] Pic N., Glachant A., Nitsche S., Hoarau J.Y., Goguenheim D., Vuillaume D., Sibai A., Chaneliere C.
Determination of the electrical properties of thermally grown ultrathin nitride films.
Solid State Electronics,
Vol. 45 (8) p.1265-1270, 2001 

[25] Goguenheim D., Bravaix A., Ananou B., Trapes C., Mondon F., Reimbold G.
Temperature and field dependence of stress induced leakage currents in very thin gate oxides.
Journal of Non-Crystalline Solids,
vol. 280, p.78-85, 2001 

[26] Pic N., Glachant A., Nitsche S., Hoarau J.Y., Goguenheim D., Vuillaume D., Sibai A., Autran J.L.
Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown _SiOX.
Journal of Non-Crystalline Solids,
Vol. 280 (1-3) p.69-77, 2001 

[27] Bravaix A., Goguenheim D., Revil N., Vincent E.
Hot-Carrier Reliability study of Second and First Impact Ionization degradation in 0.15µm Channel-Length N-MOSFET's ".
Microelectronics Engineering,
vol. 59, p. 101-108, 2001 

[28] Bravaix A., Goguenheim D., Revil N., Vincent E.
Injection Mechanisms and Lifetime prediction With the Substrate Voltage in 0.15µm Channel-Length N-MOSFET's
Microelectronics and Reliability,
vol. 41, p. 1313-1318, 2001 

[29.] Goguenheim D., Trapes C., Bravaix A.
Comparison of degradation modes in 1.2-2.1 nm thick oxides submitted to uniform and hot carrier injections in NMOSFETS.
Journal of Non-Crystalline Solids,
vol. 322, p.183-190, 2003 

[30] Trapes C., Bravaix A., Goguenheim D.,
Impact of carrier injection in 2.2nm-thick _SiO2 oxides after first and substrate enhanced electron injection.
Journal of Non-Crystalline Solids,
vol. 322, p.199-205, 2003 

[31] Bravaix A., Goguenheim D., Revil ., Rubaldo L.
Efficiency of interface trap generation under hole injection in 2.1nm thick gate-oxide P-MOSFET's.
Journal of Non-Crystalline Solids,
vol. 322, p.139-146, 2003 

[32] Bescond M., Lannoo M., Goguenheim D., Autran J.L.
Towards a full microscopic approach to the modeling of Nanotransistors.
Journal of Non-Crystalline Solids,
vol. 322, p.160-167, 2003 

[33] Bravaix A., Trapes C., Goguenheim D., Revil N., Vincent E.
Carrier injection efficiency for the reliability study of 3.5-1.2nm thick gate-oxide CMOS technologies
Microelectronics Reliability,
vol. 43, p. 1241-1246, 2003 

[34] Bravaix A., Goguenheim D., Revil N., Vincent E.
" Deep Hole Trapping Effects in the Degradation mechanisms of 6.5 to 2nm thick gate-oxide PMOSFETs",
Microelectronics Engineering,
Vol. 72/1-4, pp. 106-111, 2004. 

[35] Bravaix A., Goguenheim D., Revil N., Vincent E.,
"Hole Injection Enhanced Hot-Carrier Degradation in PMOSFETs used for System On Chip applications with 6.5-2nm thick gate-oxide",
Microelectronics Reliability,
Vol. 44 N°1, p. 65-77, 2004.

[36] Goguenheim D., Bravaix A., Gomri S., Moragues J.M., Monserie C., Legrand N., Boivin P.,
"Impact of Wafer Charging on Hot Carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies",
Microelectronics Reliability, 2005, 45, 487-492. 

[37] Trapes C., Goguenheim D., Bravaix A.,
"Experimental extraction of degradation parameters after Constant Voltage Stress and Substrate Hot Electron Injection on Ultrathin oxides",
Microelectronics Reliability, 2005, 45, 883-886.

[38] Trapes C., Goguenheim D., Bravaix A.,
Ultrathin oxide reliability after combined Constant Voltage Stress and Substrate Hot Electron Injection,
Journal of Non-Crystalline Solids,
Vol. 351, Issue 21-23, p. 1860-1865, 2005

[39] Menou N., Castagnos A.M., Muller C., Goguenheim D., Goux L., Wouters D.J., Hodeau J.L., Dooryhee E., Barrett R.,
"Degradation and recovery of polarization under synchrotron X-rays in _SrBi2Ta2O9 ferroelectric capacitors" ,
J.Appl.Phys. 97, p. 044106, 2005. 

[40] Bravaix A., Goguenheim D., Huard V., Denais M., Parthasarathy C., Perrier F., Revil N., Vincent E.
" Impacts of the Recovery Phenomena on the Worst-Case of Damage in DC/AC stressed Ultra-thin NO gate-Oxide MOSFETs"
Microelectronics Reliability,
Vol. 45 Issue 9-11, pp. 1370-1375, 2005.

[41.] Pic D., Ogier J.L., Goguenheim D.,
A comprehensive study of Stress Induced Leakage Current using a floating gate structure for direct applications in EEPROM memories
Microelectronics Reliability, 2007, Vol. 47, p. 1322-1329. 

[42] Goguenheim D., Pic D., Ogier J.L.
Oxide reliability below 3nm for advanced CMOS: issues, characterization and solutions
Microelectronics Reliability, 2007, Vol. 47, p. 1373-1377. 

[43.] Pic D., Ogier J.L., Goguenheim D.
Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm _SiO2 thin oxides stressed to hard breakdown

Microelectronics Reliability, 2008, vol. 48, n°3, p. 335-341.
doi:10.1016/j.microrel.2007.08.006 

[44] Courtade L., Turquat Ch., Muller Ch., Lisoni J.G., Goux L., Wouters D.J., Goguenheim D., Roussel P., Ortega L.
Oxidation kinetics of Ni metallic films: formation of NiO-based resistive switching structures
Thin Solid Films, 2008, Vol. 516, n°12, p. 4083-4092.
doi:10.1016 /j.tsf.2007.09.050

[45.] Pic D., Regnier A., Pean V., Ogier J.L., Goguenheim D.
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications
Microelectronics Reliability, 2008, vol. 48 (8-9), pp. 1318-1321.
doi: 10.1016/j.microrel.2008.07.050 

[46] Bénard C., Math G., Fornara P., Ogier J.L., Goguenheim D.
" Influence of various process steps on the reliability of PMOSFETs submitted to Negative Bias Temperature Instabilities"
Microelectronics Reliability, Vol. 49 (9-11), pp. 1008-1012, 2009.
DOI : 10.1016/j.microrel.2009.06.022

 [47] Desbief S., Patrone L., Goguenheim D., Guérin D., Vuillaume D.
" Impact of chain length, temperature, and humidity on the growth of long alkyltrichlorosilane self-assembled monolayers "
Phys. Chem. Chem. Phys. vol. 13, pp. 2870-2879, 2011.
DOI : 10.1039/C0CP01382J, 2011. 

[48.] Delafosse G., Patrone L., Goguenheim D.
" Functionalization of silicon dioxide surface with 3-aminopropyltrimethoxysilane for fullerene C60 immobilization"
Nanoscience Nanotechnology, Vol. 11, pp. 9310-9315, 2011.
DOI:10.1166/jnn.2011.4289, 2011. 

[49.] Desbief S., Patrone L., Goguenheim D., Vuillaume D.
" Different types of phase separation in binary monolayers of long chain alkyltrichlorosilanes on silicon oxide"
RSCAdv., Vol. 2, pp. 3014-3024, 2012.
DOI:10.1039/C2RA01327D, 2012.

[50.] Forni C.; Mainard O.; Melon C.; Goguenheim D. ; Golf LKL ; Salin P.
" Portable microstimulator for chronic deep brain stimulation in freely moving rats "
JOURNAL OF NEUROSCIENCE METHODS, Volume: 209Issue: pp.50-57, .2012

[51] Delafosse G., Patrone L., Goguenheim D.
" Dry and Wet Functionalization of Silicon Dioxide Surface with 3-Aminopropylmethoxysilane: Application to Fullerene C60 Anchoring"
Int. J. Nanotechnology, Vol. 9, pp. 312-324, 2012.
DOI: 10.1504/IJNT.2012.045336, 2012.

[52] Carmona M., Rebuffat B., Delalleau J., Gagliano O., Lopez L., Ogier J.-L., Goguenheim D.
MOSFET layout modifications for hump effect removal
Microelectronic Engineering. September 2013 pp.109:168-171
DOI: 10.1016/j.mee.2013.03.109